Learning Objectives
- Understand phonon heat current and the thermal conductivity tensor
- Derive thermal conductivity from the Boltzmann transport equation (BTE)
- Master the relaxation time approximation (RTA) and its validity
- Learn the Callaway model and its improvements for thermal conductivity
- Understand various scattering mechanisms: phonon-phonon, boundary, impurity, isotope
- Apply Matthiessen's rule and recognize its limitations
- Analyze mean free path distributions and ballistic transport
- Explore the minimum thermal conductivity concept
- Calculate thermal conductivity using Python with realistic scattering models
3.1 Introduction: Thermal Conductivity in Materials
Thermal conductivity is one of the most important transport properties of materials, governing heat dissipation in electronics, energy efficiency in thermoelectrics, and thermal management in diverse applications. In insulators and semiconductors, heat is primarily carried by phonons - the quantized lattice vibrations we studied in previous chapters.
Understanding phonon thermal conductivity requires connecting microscopic physics (phonon dispersion, scattering processes) to macroscopic observables (temperature gradient, heat flux). The Boltzmann transport equation provides this connection, offering a rigorous framework for calculating thermal conductivity from first principles.
Key Questions This Chapter Addresses
- How do phonons carry heat through a crystal lattice?
- What determines the thermal conductivity of a material?
- Why does thermal conductivity vary dramatically between materials (diamond: 2000 W/m·K, glass: 1 W/m·K)?
- How do scattering processes limit phonon mean free paths?
- What happens at nanoscales when phonon transport becomes ballistic?
3.2 Phonon Heat Current and Thermal Conductivity Tensor
3.2.1 Heat Current Density
When phonons with different wave vectors have different populations, they carry a net energy flux. The heat current density (heat flux per unit area) is:
Phonon Heat Current Density
\[ \mathbf{J}_q = \sum_{\mathbf{k},s} \hbar\omega_{\mathbf{k}s} \, \mathbf{v}_{\mathbf{k}s} \, n_{\mathbf{k}s} \]
where:
- \(\mathbf{k}\) is the phonon wave vector
- \(s\) labels the phonon branch (acoustic, optical)
- \(\omega_{\mathbf{k}s}\) is the phonon frequency
- \(\mathbf{v}_{\mathbf{k}s} = \nabla_{\mathbf{k}}\omega_{\mathbf{k}s}\) is the group velocity
- \(n_{\mathbf{k}s}\) is the phonon occupation number
In thermal equilibrium, \(n_{\mathbf{k}s}^0 = 1/(e^{\hbar\omega/k_BT} - 1)\) is isotropic, and the sum over all directions gives zero heat current. However, when a temperature gradient \(\nabla T\) is applied, the distribution becomes anisotropic, creating a net heat flux.
3.2.2 Fourier's Law and the Thermal Conductivity Tensor
For small temperature gradients, the heat current is proportional to the gradient:
Fourier's Law of Heat Conduction
\[ \mathbf{J}_q = -\boldsymbol{\kappa} \cdot \nabla T \]
where \(\boldsymbol{\kappa}\) is the thermal conductivity tensor. In general, \(\boldsymbol{\kappa}\) is a symmetric 3×3 matrix.
For cubic crystals or polycrystalline materials, symmetry makes \(\boldsymbol{\kappa}\) diagonal and isotropic:
\[ \boldsymbol{\kappa} = \kappa \mathbb{I}, \quad \mathbf{J}_q = -\kappa \nabla T \]
where \(\kappa\) is the scalar thermal conductivity. For anisotropic materials (e.g., graphite, layered materials), different components \(\kappa_{xx}\), \(\kappa_{yy}\), \(\kappa_{zz}\) can differ by orders of magnitude.
3.3 The Boltzmann Transport Equation (BTE)
3.3.1 General Boltzmann Equation
The Boltzmann transport equation describes the time evolution of the phonon distribution function \(n_{\mathbf{k}s}(\mathbf{r}, t)\) under external forces and scattering processes:
Phonon Boltzmann Transport Equation
\[ \frac{\partial n_{\mathbf{k}s}}{\partial t} + \mathbf{v}_{\mathbf{k}s} \cdot \nabla_{\mathbf{r}} n_{\mathbf{k}s} + \mathbf{F} \cdot \nabla_{\mathbf{k}} n_{\mathbf{k}s} = \left(\frac{\partial n_{\mathbf{k}s}}{\partial t}\right)_{\text{scatt}} \]
Terms from left to right:
- Time derivative: Explicit time dependence
- Drift term: Phonons propagate with group velocity
- Force term: External forces (usually negligible for phonons)
- Collision term: Scattering changes phonon distribution
For steady-state thermal conductivity in the absence of external forces:
\[ \mathbf{v}_{\mathbf{k}s} \cdot \nabla_{\mathbf{r}} n_{\mathbf{k}s} = \left(\frac{\partial n_{\mathbf{k}s}}{\partial t}\right)_{\text{scatt}} \]
3.3.2 The Relaxation Time Approximation (RTA)
The collision term is generally complex, involving all possible scattering processes. The relaxation time approximation simplifies this:
Relaxation Time Approximation (RTA)
\[ \left(\frac{\partial n_{\mathbf{k}s}}{\partial t}\right)_{\text{scatt}} = -\frac{n_{\mathbf{k}s} - n_{\mathbf{k}s}^0}{\tau_{\mathbf{k}s}} \]
where:
- \(n_{\mathbf{k}s}^0\) is the equilibrium Bose-Einstein distribution
- \(\tau_{\mathbf{k}s}\) is the relaxation time - the characteristic time for the distribution to relax back to equilibrium
Physical Interpretation of Relaxation Time
The relaxation time \(\tau_{\mathbf{k}s}\) represents the average time between scattering events that randomize the phonon momentum direction. A longer relaxation time means:
- Phonons travel further before scattering (larger mean free path)
- Heat is transported more efficiently (higher thermal conductivity)
- The phonon has a longer "lifetime" in a given state
The RTA assumes all scattering events equally randomize momentum, which is not strictly true for all processes (especially normal phonon-phonon scattering).
3.3.3 Solving the BTE: Linear Response
For small temperature gradients, we assume a linearized solution:
\[ n_{\mathbf{k}s} = n_{\mathbf{k}s}^0(T) + \delta n_{\mathbf{k}s} \]
where \(\delta n_{\mathbf{k}s}\) is the deviation from equilibrium. Since \(\nabla_{\mathbf{r}} n_{\mathbf{k}s}^0 = \frac{\partial n^0}{\partial T}\nabla T\):
\[ \mathbf{v}_{\mathbf{k}s} \cdot \nabla T \frac{\partial n_{\mathbf{k}s}^0}{\partial T} = -\frac{\delta n_{\mathbf{k}s}}{\tau_{\mathbf{k}s}} \]
Solving for \(\delta n_{\mathbf{k}s}\):
\[ \delta n_{\mathbf{k}s} = -\tau_{\mathbf{k}s} \mathbf{v}_{\mathbf{k}s} \cdot \nabla T \frac{\partial n_{\mathbf{k}s}^0}{\partial T} \]
Substituting into the heat current expression and using \(\frac{\partial n^0}{\partial T} = \frac{\hbar\omega}{k_BT^2}\frac{e^{\hbar\omega/k_BT}}{(e^{\hbar\omega/k_BT}-1)^2}\):
Thermal Conductivity from BTE (RTA)
\[ \kappa = \frac{1}{V} \sum_{\mathbf{k},s} C_{\mathbf{k}s} \, v_{\mathbf{k}s}^2 \, \tau_{\mathbf{k}s} \]
where \(C_{\mathbf{k}s} = k_B \left(\frac{\hbar\omega_{\mathbf{k}s}}{k_BT}\right)^2 \frac{e^{\hbar\omega_{\mathbf{k}s}/k_BT}}{(e^{\hbar\omega_{\mathbf{k}s}/k_BT}-1)^2}\) is the mode-specific heat capacity, and \(V\) is volume.
Converting the sum to an integral over the Brillouin zone and introducing the density of states \(g(\omega)\):
\[ \kappa = \int_0^{\omega_{\text{max}}} C(\omega) \, v^2(\omega) \, \tau(\omega) \, g(\omega) \, d\omega \]
3.4 Kinetic Theory Formula
3.4.1 Debye Model Approximation
For a simple isotropic Debye model with constant velocity \(v_s\) (speed of sound) and average relaxation time \(\bar{\tau}\):
Kinetic Theory Formula for Thermal Conductivity
\[ \kappa = \frac{1}{3} C_V v_s^2 \bar{\tau} = \frac{1}{3} C_V v_s \ell \]
where:
- \(C_V\) is the volumetric heat capacity
- \(v_s\) is the average sound velocity
- \(\ell = v_s \bar{\tau}\) is the mean free path
This formula reveals the three factors determining thermal conductivity:
Physical Factors in Thermal Conductivity
- Heat capacity \(C_V\): How much energy phonons can store (temperature-dependent)
- Velocity \(v_s\): How fast phonons transport energy (material-dependent)
- Mean free path \(\ell\): How far phonons travel before scattering (limited by various mechanisms)
3.5 Scattering Mechanisms
The relaxation time (or mean free path) is limited by various scattering processes. Each mechanism contributes to the total scattering rate:
3.5.1 Matthiessen's Rule
Matthiessen's Rule
\[ \frac{1}{\tau_{\text{total}}} = \sum_i \frac{1}{\tau_i} = \frac{1}{\tau_U} + \frac{1}{\tau_N} + \frac{1}{\tau_B} + \frac{1}{\tau_I} + \frac{1}{\tau_{\text{iso}}} + \cdots \]
Scattering rates from different mechanisms add. Equivalently for mean free paths:
\[ \frac{1}{\ell_{\text{total}}} = \sum_i \frac{1}{\ell_i} \]
Limitations of Matthiessen's Rule
Matthiessen's rule assumes:
- Scattering processes are independent
- Each scattering event completely randomizes phonon momentum
These assumptions break down for:
- Normal processes: Conserve total momentum, don't fully randomize
- Correlated scattering: At grain boundaries or interfaces
- Resonant scattering: Energy-selective processes
3.5.2 Phonon-Phonon Scattering: Umklapp Processes
Anharmonic interactions cause phonons to scatter with each other. The most important for thermal resistance are umklapp processes (U-processes):
Umklapp Scattering Rate
Three-phonon umklapp processes have a scattering rate:
\[ \frac{1}{\tau_U} = B\omega^2 T e^{-\Theta_D/bT} \]
or approximately at high temperature (\(T \gg \Theta_D\)):
\[ \frac{1}{\tau_U} \propto \omega^2 T \]
where \(B\) depends on anharmonicity (Grüneisen parameter), \(\Theta_D\) is the Debye temperature, and \(b \approx 2-3\).
At low temperatures (\(T < \Theta_D/3\)), umklapp processes are exponentially suppressed because high-energy phonons needed for momentum non-conservation are rare.
3.5.3 Boundary Scattering
In finite samples, phonons scatter from external boundaries or grain boundaries:
Boundary Scattering Mean Free Path
\[ \ell_B = L \]
where \(L\) is the characteristic sample size (film thickness, grain size, nanowire diameter). The relaxation time is:
\[ \tau_B = \frac{L}{v} \]
Boundary scattering dominates at low temperatures or in nanostructured materials where intrinsic mean free paths exceed the sample dimensions.
3.5.4 Impurity and Defect Scattering
Point defects (substitutional atoms, vacancies, interstitials) scatter phonons via mass difference and force constant difference:
Rayleigh Scattering (Point Defects)
\[ \frac{1}{\tau_I} = A\omega^4 \]
where \(A\) depends on defect concentration and mass/force constant mismatch:
\[ A \propto \Gamma = c \left[\left(\frac{\Delta M}{M}\right)^2 + \epsilon \left(\frac{\Delta K}{K}\right)^2\right] \]
with \(c\) the defect concentration and \(\epsilon\) a numerical factor.
The \(\omega^4\) dependence means high-frequency phonons scatter more strongly, similar to Rayleigh scattering of light (why the sky is blue).
3.5.5 Isotope Scattering
Natural isotope mixtures create mass disorder. For example, natural silicon contains ~92% 28Si, ~5% 29Si, and ~3% 30Si:
Isotope Scattering Rate
\[ \frac{1}{\tau_{\text{iso}}} = \frac{\Gamma_{\text{iso}}}{4\pi v^3}\omega^4 \]
where the isotope scattering parameter is:
\[ \Gamma_{\text{iso}} = \sum_i c_i \left(1 - \frac{M_i}{\bar{M}}\right)^2 \]
with \(c_i\) the concentration of isotope \(i\), \(M_i\) its mass, and \(\bar{M}\) the average mass.
Isotopically pure materials (e.g., 28Si, isotopically enriched diamond) show significantly higher thermal conductivity by eliminating this scattering channel.
3.5.6 Summary of Scattering Mechanisms
| Mechanism | Rate Dependence | Dominates When |
|---|---|---|
| Umklapp (U) | \(\omega^2 T e^{-\Theta_D/bT}\) | High T, bulk crystals |
| Normal (N) | \(\omega^2 T\) | Intermediate T (limited resistance) |
| Boundary | \(v/L\) | Low T, nanostructures |
| Impurity | \(\omega^4\) | Low T, defective crystals |
| Isotope | \(\omega^4\) | Low T, natural isotope mixture |
3.6 The Callaway Model
3.6.1 Beyond Simple RTA: Normal vs. Umklapp Processes
The simple RTA treats all scattering equally. However, normal processes (N-processes) conserve total phonon momentum and don't directly resist heat flow. Only umklapp processes and other resistive scattering actually limit thermal conductivity.
Callaway (1959) developed a model that separates resistive and non-resistive scattering:
Callaway Model
\[ \kappa = \kappa_1 + \kappa_2 \]
where:
\[ \kappa_1 = \frac{k_B}{2\pi^2 v} \left(\frac{k_BT}{\hbar}\right)^3 \int_0^{\Theta_D/T} \frac{\tau_C x^4 e^x}{(e^x-1)^2} dx \]
\[ \kappa_2 = \frac{k_B}{2\pi^2 v} \left(\frac{k_BT}{\hbar}\right)^3 \frac{\left[\int_0^{\Theta_D/T} \frac{\tau_N x^4 e^x}{(e^x-1)^2} dx\right]^2}{\int_0^{\Theta_D/T} \frac{\tau_N/\tau_R x^4 e^x}{(e^x-1)^2} dx} \]
with \(x = \hbar\omega/k_BT\), and:
- \(\tau_C^{-1} = \tau_N^{-1} + \tau_R^{-1}\): Combined relaxation time
- \(\tau_N^{-1}\): Normal process rate
- \(\tau_R^{-1} = \tau_U^{-1} + \tau_B^{-1} + \tau_I^{-1}\): Resistive process rate
The first term \(\kappa_1\) represents thermal conductivity if all scattering were resistive. The second term \(\kappa_2\) is a correction accounting for momentum-conserving N-processes.
When Does Callaway Model Matter?
The Callaway correction \(\kappa_2\) is significant when:
- Normal processes are much faster than umklapp: \(\tau_N^{-1} \gg \tau_U^{-1}\)
- Temperature is intermediate: \(\Theta_D/3 < T < \Theta_D\)
- High-purity crystals where N-processes redistribute momentum without resistance
At very high T, umklapp dominates and the simple RTA suffices. At very low T, boundary scattering dominates and N-processes are irrelevant.
3.7 Mean Free Path Distribution and Spectral Analysis
3.7.1 Phonon Mean Free Path Spectrum
Different phonon modes contribute differently to thermal conductivity. The mean free path distribution reveals which phonons carry most heat:
Accumulation Function
The cumulative thermal conductivity from phonons with mean free path less than \(\Lambda\):
\[ \kappa_{\text{acc}}(\Lambda) = \int_0^{\Lambda} \frac{d\kappa}{d\ell} d\ell \]
where \(\frac{d\kappa}{d\ell}\) is the thermal conductivity per unit mean free path.
Experiments and calculations show that in many materials:
- At room temperature: 50% of heat is carried by phonons with \(\ell < 100\) nm
- Long mean free paths: Some phonons have \(\ell > 10\) μm, contributing significantly
- Nanostructuring: Reduces \(\kappa\) by blocking long-MFP phonons via boundary scattering
3.7.2 Ballistic vs. Diffusive Transport
When the sample dimension \(L\) becomes comparable to or smaller than the phonon mean free path \(\ell\), transport transitions from diffusive to ballistic:
Transport Regimes
- Diffusive regime (\(L \gg \ell\)):
- Many scattering events across sample
- Fourier's law valid: \(\kappa\) is material property
- Thermal conductivity independent of \(L\)
- Ballistic regime (\(L \ll \ell\)):
- Phonons travel across sample without scattering
- Thermal conductance \(G \propto L^{-1}\) (not resistive)
- \(\kappa_{\text{eff}} \propto L\) (increases with size!)
- Transition regime (\(L \sim \ell\)):
- Complex mixture of ballistic and diffusive transport
- Requires Boltzmann equation or molecular dynamics
3.8 Size Effects in Thermal Conductivity
Nanostructuring provides a powerful knob to tune thermal conductivity for applications like thermoelectrics (low \(\kappa\) desired) or thermal management (high \(\kappa\) desired).
3.8.1 Thin Films
For a thin film of thickness \(d\):
\[ \frac{\kappa_{\text{film}}}{\kappa_{\text{bulk}}} = \frac{\int_0^{\infty} \frac{C(\omega)v^2(\omega)\tau(\omega)}{1 + \tau(\omega)v(\omega)/d} g(\omega) d\omega}{\int_0^{\infty} C(\omega)v^2(\omega)\tau(\omega) g(\omega) d\omega} \]
Phonons with \(\ell = v\tau > d\) are suppressed, reducing \(\kappa_{\text{film}}\).
3.8.2 Nanowires and Nanotubes
For nanowires with diameter \(D\), boundary scattering at the surface limits MFP:
\[ \ell_B \approx D \]
Experiments on silicon nanowires show:
- \(\kappa\) can be reduced by 100× compared to bulk at \(D < 100\) nm
- Surface roughness enhances boundary scattering, further reducing \(\kappa\)
- ZT (thermoelectric figure of merit) dramatically improved
3.9 Minimum Thermal Conductivity
Is there a lower limit to thermal conductivity? Cahill and Pohl (1992) proposed a minimum \(\kappa\) based on the idea that phonon MFP cannot be shorter than half a wavelength (\(\ell_{\min} \sim \lambda/2\)):
Cahill-Pohl Minimum Thermal Conductivity
\[ \kappa_{\min} = k_B n^{2/3} \sum_i v_i \left(\frac{T}{\Theta_i}\right)^2 \int_0^{\Theta_i/T} \frac{x^3 e^x}{(e^x-1)^2} dx \]
where \(n\) is number density of atoms, \(v_i\) are sound velocities for different polarizations, and \(\Theta_i\) are cutoff temperatures.
A simplified form at high temperature:
\[ \kappa_{\min} \approx 0.4 \, k_B n^{2/3} \sum_i v_i \]
Amorphous materials (glasses, amorphous silicon) and highly disordered crystals approach this minimum. It represents the thermal conductivity when phonons scatter after each lattice spacing - the most disordered possible state.
3.10 Python Implementation: Thermal Conductivity Calculation
Let's implement a thermal conductivity calculator using the Callaway model with realistic scattering mechanisms:
import numpy as np
import matplotlib.pyplot as plt
from scipy.integrate import quad
from scipy.constants import hbar, k as kB, pi
class PhononThermalConductivity:
"""
Calculate thermal conductivity using Callaway model with multiple
scattering mechanisms.
"""
def __init__(self, material_params):
"""
material_params: dict with keys
- theta_D: Debye temperature (K)
- v: average sound velocity (m/s)
- M: average atomic mass (kg)
- a: lattice constant (m)
- gamma: Grüneisen parameter
- V_atom: atomic volume (m³)
"""
self.theta_D = material_params['theta_D']
self.v = material_params['v']
self.M = material_params['M']
self.a = material_params['a']
self.gamma = material_params['gamma']
self.V_atom = material_params['V_atom']
def tau_umklapp(self, omega, T):
"""Umklapp scattering relaxation time"""
if T < 1e-6:
return np.inf
# Simplified umklapp rate: B*omega^2*T*exp(-theta_D/bT)
b = 2.0 # typical value
B = self.gamma**2 / (self.M * self.v**2 * self.theta_D)
rate = B * omega**2 * T * np.exp(-self.theta_D / (b * T))
return 1.0 / (rate + 1e-20) # avoid division by zero
def tau_boundary(self, omega, L):
"""Boundary scattering relaxation time"""
# tau_B = L / v
return L / self.v
def tau_impurity(self, omega, Gamma_impurity):
"""Point defect scattering (Rayleigh scattering)"""
# rate ~ Gamma * omega^4
if Gamma_impurity < 1e-10:
return np.inf
rate = Gamma_impurity * omega**4 / (4 * pi * self.v**3)
return 1.0 / rate
def tau_isotope(self, omega, Gamma_isotope):
"""Isotope scattering"""
if Gamma_isotope < 1e-10:
return np.inf
rate = Gamma_isotope * omega**4 / (4 * pi * self.v**3)
return 1.0 / rate
def tau_normal(self, omega, T):
"""Normal process rate (approximate)"""
# Normal processes ~ omega^2 * T but don't conserve momentum
if T < 1e-6:
return np.inf
B_N = self.gamma**2 / (self.M * self.v**2 * self.theta_D) * 0.5
rate = B_N * omega**2 * T
return 1.0 / (rate + 1e-20)
def tau_combined(self, omega, T, L=np.inf, Gamma_imp=0, Gamma_iso=0):
"""Combined relaxation time (Matthiessen's rule)"""
tau_U = self.tau_umklapp(omega, T)
tau_B = self.tau_boundary(omega, L)
tau_I = self.tau_impurity(omega, Gamma_imp)
tau_iso = self.tau_isotope(omega, Gamma_iso)
# Resistive scattering rate
rate_R = 1/tau_U + 1/tau_B + 1/tau_I + 1/tau_iso
return 1.0 / rate_R
def thermal_conductivity_RTA(self, T, L=np.inf, Gamma_imp=0, Gamma_iso=0):
"""
Calculate thermal conductivity using simple RTA
"""
omega_D = self.theta_D * kB / hbar
def integrand(x):
# x = hbar*omega / (kB*T)
omega = x * kB * T / hbar
if omega > omega_D:
return 0.0
# Heat capacity factor
C_factor = x**4 * np.exp(x) / (np.exp(x) - 1)**2
# Relaxation time
tau = self.tau_combined(omega, T, L, Gamma_imp, Gamma_iso)
return tau * C_factor
# Debye integral
x_max = self.theta_D / T
integral, _ = quad(integrand, 0, x_max, limit=100)
# Prefactor: kB/(2*pi^2*v) * (kB*T/hbar)^3
prefactor = kB / (2 * pi**2 * self.v) * (kB * T / hbar)**3
kappa = prefactor * self.v**2 * integral
return kappa
def thermal_conductivity_Callaway(self, T, L=np.inf, Gamma_imp=0, Gamma_iso=0):
"""
Calculate thermal conductivity using Callaway model
(includes normal process correction)
"""
omega_D = self.theta_D * kB / hbar
def integrand_1(x):
omega = x * kB * T / hbar
if omega > omega_D:
return 0.0
tau_C = self.tau_combined(omega, T, L, Gamma_imp, Gamma_iso)
C_factor = x**4 * np.exp(x) / (np.exp(x) - 1)**2
return tau_C * C_factor
def integrand_2_num(x):
omega = x * kB * T / hbar
if omega > omega_D:
return 0.0
tau_N = self.tau_normal(omega, T)
C_factor = x**4 * np.exp(x) / (np.exp(x) - 1)**2
return tau_N * C_factor
def integrand_2_denom(x):
omega = x * kB * T / hbar
if omega > omega_D:
return 0.0
tau_N = self.tau_normal(omega, T)
tau_R = self.tau_combined(omega, T, L, Gamma_imp, Gamma_iso)
C_factor = x**4 * np.exp(x) / (np.exp(x) - 1)**2
return (tau_N / tau_R) * C_factor
x_max = self.theta_D / T
# First term (RTA-like)
I1, _ = quad(integrand_1, 0, x_max, limit=100)
# Second term (normal process correction)
I2_num, _ = quad(integrand_2_num, 0, x_max, limit=100)
I2_denom, _ = quad(integrand_2_denom, 0, x_max, limit=100)
# Avoid division by zero
if I2_denom < 1e-20:
I2_denom = 1e-20
prefactor = kB / (2 * pi**2 * self.v) * (kB * T / hbar)**3
kappa_1 = prefactor * self.v**2 * I1
kappa_2 = prefactor * self.v**2 * I2_num**2 / I2_denom
return kappa_1 + kappa_2
# Example: Silicon thermal conductivity
print("=" * 60)
print("Phonon Thermal Conductivity Calculator")
print("=" * 60)
# Silicon parameters
Si_params = {
'theta_D': 645, # Debye temperature (K)
'v': 6400, # Average sound velocity (m/s)
'M': 28.085 * 1.66e-27, # Atomic mass (kg)
'a': 5.43e-10, # Lattice constant (m)
'gamma': 1.0, # Grüneisen parameter
'V_atom': (5.43e-10)**3 / 8 # Atomic volume (m³)
}
calculator = PhononThermalConductivity(Si_params)
# Calculate thermal conductivity vs temperature
T_range = np.logspace(1, 3, 50) # 10 K to 1000 K
kappa_pure = []
kappa_isotope = []
kappa_nano = []
# Natural silicon isotope parameter
Gamma_Si_nat = 2e-4 # Natural isotope mixture
for T in T_range:
# Pure silicon (no impurities, bulk)
k1 = calculator.thermal_conductivity_Callaway(T)
kappa_pure.append(k1)
# Silicon with natural isotope mixture
k2 = calculator.thermal_conductivity_Callaway(T, Gamma_iso=Gamma_Si_nat)
kappa_isotope.append(k2)
# Silicon nanowire (100 nm diameter)
k3 = calculator.thermal_conductivity_Callaway(T, L=100e-9, Gamma_iso=Gamma_Si_nat)
kappa_nano.append(k3)
# Plot results
fig, (ax1, ax2) = plt.subplots(1, 2, figsize=(14, 6))
# Linear scale
ax1.plot(T_range, kappa_pure, 'b-', linewidth=2, label='Pure Si (isotopically pure)')
ax1.plot(T_range, kappa_isotope, 'r--', linewidth=2, label='Natural Si (isotope scattering)')
ax1.plot(T_range, kappa_nano, 'g:', linewidth=2, label='Si nanowire (100 nm)')
ax1.set_xlabel('Temperature (K)', fontsize=12)
ax1.set_ylabel('Thermal Conductivity (W/m·K)', fontsize=12)
ax1.set_title('Silicon Thermal Conductivity (Callaway Model)', fontsize=14)
ax1.grid(True, alpha=0.3)
ax1.legend()
ax1.set_xlim(0, 1000)
# Log-log scale
ax2.loglog(T_range, kappa_pure, 'b-', linewidth=2, label='Pure Si')
ax2.loglog(T_range, kappa_isotope, 'r--', linewidth=2, label='Natural Si')
ax2.loglog(T_range, kappa_nano, 'g:', linewidth=2, label='Si nanowire (100 nm)')
ax2.set_xlabel('Temperature (K)', fontsize=12)
ax2.set_ylabel('Thermal Conductivity (W/m·K)', fontsize=12)
ax2.set_title('Log-Log Plot (Power Law Analysis)', fontsize=14)
ax2.grid(True, alpha=0.3, which='both')
ax2.legend()
plt.tight_layout()
plt.show()
# Print specific values
print("\nThermal Conductivity Values:")
print(f"{'Temperature (K)':<20} {'Pure Si':<15} {'Natural Si':<15} {'Si Nanowire':<15}")
print("-" * 65)
for i, T in enumerate([50, 100, 200, 300, 500]):
idx = np.argmin(np.abs(T_range - T))
print(f"{T:<20} {kappa_pure[idx]:<15.1f} {kappa_isotope[idx]:<15.1f} {kappa_nano[idx]:<15.1f}")
print("\nKey Observations:")
print("1. Low T (< 100 K): κ ~ T³ (boundary/defect scattering dominates)")
print("2. High T (> 300 K): κ ~ 1/T (umklapp scattering dominates)")
print("3. Isotope scattering reduces κ by ~10% at room temperature")
print("4. Nanostructuring (100 nm) reduces κ by ~10× (boundary scattering)")
Understanding the Code
- Class structure: Encapsulates material parameters and scattering models
- Scattering mechanisms: Separate methods for umklapp, boundary, impurity, isotope
- Matthiessen's rule: Combined relaxation time from individual rates
- Callaway model: Includes normal process correction (second term)
- Temperature trends: Low-T (T³) vs. high-T (1/T) behavior visible in log-log plot
3.11 Comparison with Experimental Data
The Callaway model with proper scattering parameters reproduces experimental thermal conductivity remarkably well:
| Material | κ at 300 K (W/m·K) | Dominant Scattering | Peak κ (K) |
|---|---|---|---|
| Diamond | 2000-2200 | Isotope (low T), Umklapp (high T) | ~100 K |
| Silicon | 148 | Isotope, Umklapp | ~30 K |
| Germanium | 60 | Isotope, Umklapp | ~15 K |
| Graphite (in-plane) | 2000 | Umklapp (weak anharmonicity) | ~80 K |
| SiO₂ glass | 1.4 | Amorphous (near κ_min) | No peak |
| Si nanowire (50 nm) | ~10 | Boundary | Suppressed |
Key experimental observations:
- Peak at low T: Most crystals show a peak where phonon population (C_V ~ T³) increases faster than scattering rates destroy MFP
- High-T 1/T decrease: Umklapp scattering grows linearly with T
- Isotope effects: Isotopically enriched samples show 50% higher κ at low T
- Size effects: Nanostructures show dramatic κ reduction and peak suppression
3.12 Advanced Topics and Current Research
3.12.1 Beyond the RTA: Full Solution of BTE
Modern computational methods solve the BTE exactly without RTA approximations:
- Iterative methods: Solve BTE by iteration until self-consistency
- Variational methods: Minimize functional to find optimal distribution
- Ab initio calculations: Calculate scattering rates from first principles (DFT + phonon code)
3.12.2 Hydrodynamic Phonon Transport
In ultra-pure crystals at intermediate temperatures, normal processes can dominate over umklapp. In this regime, phonons behave like a viscous fluid with collective flow:
Phonon Hydrodynamics
When \(\tau_N \ll \tau_U\), phonon transport becomes hydrodynamic with phenomena like:
- Second sound: Temperature waves propagate like sound
- Poiseuille flow: Parabolic temperature profile in channels
- Knudsen minimum: Thermal conductivity minimum at \(\tau_N \sim \tau_U\)
Recently observed in graphite, graphene, and boron nitride at ~100 K.
3.12.3 Four-Phonon Scattering
Recent calculations show that four-phonon scattering (two phonons → two phonons) can be significant in materials with weak three-phonon scattering:
- Diamond: Four-phonon reduces κ by ~30% at 300 K
- Cubic BN: Similar effects observed
- Higher-order anharmonicity: Important for accurate predictions
3.13 Summary
Key Concepts
- Phonon heat current: \(\mathbf{J}_q = \sum_{\mathbf{k}s} \hbar\omega_{\mathbf{k}s} \mathbf{v}_{\mathbf{k}s} n_{\mathbf{k}s}\)
- Fourier's law: \(\mathbf{J}_q = -\kappa \nabla T\) defines thermal conductivity
- Boltzmann equation: Governs phonon distribution under gradients and scattering
- Relaxation time approximation (RTA): Simplifies collision term to \(-(n-n^0)/\tau\)
- Thermal conductivity formula: \(\kappa = \frac{1}{3}C_V v^2 \tau = \frac{1}{3}C_V v \ell\) (kinetic theory)
- Scattering mechanisms: Umklapp (\(\omega^2 T\)), boundary (\(v/L\)), impurity/isotope (\(\omega^4\))
- Matthiessen's rule: \(1/\tau_{\text{tot}} = \sum_i 1/\tau_i\) (approximate, assumes independent scattering)
- Callaway model: Separates normal (momentum-conserving) and resistive scattering
- Mean free path distribution: Spectral analysis reveals which phonons carry heat
- Ballistic transport: When \(L < \ell\), phonons cross sample without scattering
- Minimum thermal conductivity: Amorphous limit when \(\ell \sim \lambda/2\)
3.14 Exercises
Conceptual Questions
- Explain why thermal conductivity peaks at low temperature in crystalline materials but shows no peak in glasses.
- Why do normal processes (N-processes) not directly contribute to thermal resistance, despite scattering phonons?
- Diamond has one of the highest thermal conductivities. What physical properties of diamond contribute to this?
- How does isotope scattering affect thermal conductivity? Why is the effect strongest at low temperatures?
- Explain the concept of ballistic thermal transport and when it becomes important.
- What is the physical meaning of the mean free path distribution function \(d\kappa/d\ell\)?
Quantitative Problems
-
For a simple Debye model with \(C_V = 2 \times 10^6\) J/m³·K, \(v_s = 5000\) m/s, and \(\tau = 10^{-11}\) s:
- (a) Calculate the thermal conductivity using \(\kappa = \frac{1}{3}C_V v_s^2 \tau\)
- (b) What is the phonon mean free path?
- (c) If temperature doubles and umklapp scattering dominates (\(\tau \propto 1/T\)), how does \(\kappa\) change?
- Silicon has natural isotope composition: 92.2% 28Si, 4.7% 29Si, 3.1% 30Si. Calculate the isotope scattering parameter \(\Gamma_{\text{iso}}\).
- For a thin film of thickness \(d = 100\) nm with bulk mean free path \(\ell_{\text{bulk}} = 1\) μm, estimate the reduction in thermal conductivity assuming boundary scattering dominates.
- Using Matthiessen's rule, combine scattering times: \(\tau_U = 5 \times 10^{-12}\) s, \(\tau_I = 2 \times 10^{-11}\) s, \(\tau_B = 1 \times 10^{-10}\) s. What is \(\tau_{\text{total}}\)? Which mechanism dominates?
Computational Exercises
-
Modify the Python code to:
- (a) Add a plot showing the individual scattering rate contributions vs. frequency at fixed T
- (b) Calculate the mean free path distribution \(d\kappa/d\ell\) vs. \(\ell\)
- (c) Compare RTA vs. Callaway model thermal conductivity as a function of temperature
- Implement the minimum thermal conductivity formula and compare it to the Callaway model prediction for amorphous silicon dioxide.
- Create an interactive tool that allows the user to vary material parameters (Debye temperature, sound velocity, Grüneisen parameter) and observe the effect on thermal conductivity vs. temperature.
Advanced Research Problems
- Read the original Callaway (1959) paper and derive the expression for \(\kappa_2\) (the normal process correction term).
- Investigate recent experimental observations of hydrodynamic phonon transport in graphite. What conditions are necessary for this regime?
- Research four-phonon scattering calculations in diamond. How much do they reduce the predicted thermal conductivity compared to three-phonon-only calculations?